Shanghai Shiyi Industrial Co., Ltd.
Ultra-Fine Tungsten Core Diamond Wire (24-32μm) — view 1 of 5

Diamond Wire Saw (Precision Cutting)

Ultra-Fine Tungsten Core Diamond Wire (24-32μm)

A high-end diamond wire specifically designed for cutting 8–12-inch semiconductor wafers, SiC, GaN and ultra-thin wafers of ≤75 μm. Featuring a tungsten or tungsten-lanthanum alloy core combined with a three-layer composite plating process, it offers extremely high tensile strength, an extremely low breakage rate and excellent cutting precision, meeting the requirements for semiconductor-grade high cleanliness and ultra-low damage.

Overview

Product overview

1. Busbar material: pure tungsten wire or tungsten-lanthanum alloy; busbar diameter 24–32 μm; finished outer diameter 39–47 μm (tolerance ±2 μm). 2. Diamond particle size: D50 3–8 μm (commonly 5 μm), cutting edge height 1.0–4.0 μm. 3. Coating structure: pre-plated nickel base layer + diamond grit layer + thickened nickel-cobalt alloy coating; total coating thickness approximately 2.0 ± 0.3 μm. 4. Typical applications: semiconductor wafers (8-inch/12-inch), silicon carbide (SiC), gallium nitride (GaN) and thinned N-type photovoltaic silicon wafers. 5.Customisable specifications: wire diameter, diamond concentration (80–140 grains per mm), coating thickness, spool length (120 km or 240 km) and packaging.

Features

Key features and parameters

Technical specifications
SpecificationValue
Ultra-high strengthTensile strength ≥ 3000–3200 MPa (tungsten alloys can reach ≥ 6000 MPa), ensuring no deformation during high-speed cutting.
Extremely low damageFront-side chipping ≤ 2–3 μm, rear-side chipping ≤ 3–5 μm, damage layer ≤ 7–10 μm (depending on the material).
Precision tolerancesWire diameter tolerance ±2.0 μm, ovality ≤ 1.0 μm
Long service lifeService life for semiconductor cutting ≥ 240 km per roll, with a yield rate 0.68%–2.35% higher than that of mainstream products.
High purityThe tungsten wire is corrosion-resistant and compatible with semiconductor cleaning processes.
Operating speedRecommended cutting speed 12–20 m/s (semiconductors), with a maximum of 40 m/s (photovoltaics).

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Closed-Loop Carbon Steel Diamond Wire (0.33-0.78mm)

Closed-Loop Carbon Steel Diamond Wire (0.33-0.78mm)

A closed-loop diamond wire specifically designed for cutting large or irregularly shaped materials such as stone blocks, honeycomb materials and building components. Featuring a high-strength carbon steel core reinforced by specialised welding and plating, it offers exceptional breaking strength and a long service life, making it suitable for heavy-duty applications such as quarrying and stone processing.

Extremely high load capacity
High breaking strength, suitable for cutting under high tension and with high feed rates.
Closed-loop design
No wear at the joints, smooth operation, and reduced risk of wire breakage.
High durability
Reinforced with a coating for a long service life, suitable for continuous operation.
Flexible customisation
Circumference can be customised to meet customer requirements, making it compatible with cutting equipment of various sizes.
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Fine Carbon Steel Diamond Wire (34-60μm)

Fine Carbon Steel Diamond Wire (34-60μm)

A cost-effective diamond wire suitable for cutting photovoltaic silicon wafers (210 mm/182 mm), semiconductor wafers and general hard, brittle materials. Featuring a high-carbon cold-drawn steel core and a three-layer composite coating, it is produced using a well-established process and is available with consistent supply. Offering a cost advantage whilst ensuring cutting quality, it is the mainstay product for routine slicing.

Excellent mechanical properties
tensile strength ≥ 3,000–4,500 MPa (higher for finer wires), breaking force ≥ 10 N (φ78 μm).
Precision tolerances
wire diameter tolerance ±0.6–1.0 μm, ovality ≤ 1.2 μm.
Low damage
Front-side chipping ≤ 3–5 μm, rear-side chipping ≤ 5–8 μm, damage layer ≤ 8–12 μm (for semiconductor applications).
Wide compatibility
Compatible with mainstream cutting equipment
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Medium-Coarse to Coarse Carbon Steel Diamond Wire (77-580μm)

Medium-Coarse to Coarse Carbon Steel Diamond Wire (77-580μm)

Medium-coarse to coarse-diameter diamond wires specifically designed for cutting medium-to-thick, hard and brittle materials such as sapphire, ceramics, quartz, magnetic materials and stone. Featuring a high-carbon cold-drawn steel wire core and a three-layer composite plating process, these wires offer a wide range of diameters (77–580 μm) and high breaking strength, making them suitable for high-feed, high-load cutting conditions whilst balancing cutting efficiency with surface quality. Coarse wire specifications of 245 μm and above can be customised to meet diverse machining requirements.

1. High breaking strength
The thicker the wire diameter, the higher the breaking strength (φ78 μm ≥ 10 N → φ245 μm ≥ 50 N; for custom specifications of thicker wires, the breaking strength increases proportionally), ensuring the wire does not break during high-feed cutting.
2. Robust coating
Bond strength ≥ 30 MPa, coating hardness 450–580 HV, excellent wear resistance, suitable for continuous cutting under high loads.
3. Wide tolerance control
Wire diameter tolerance ranges from ±1.5–3.0 μm (77–200 μm) to ±3.0–5.0 μm (200–580 μm), with ovality ≤ 1.8 μm.
4. High versatility
Suitable for a wide range of hard and brittle materials; concentration and length can be flexibly adjusted.
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Technical Enquiry

Discuss Your Cutting or Production Requirement

Our engineering team provides free product selection support for precision wafer cutting and heavy-duty stone or concrete applications, with OEM / ODM customization available.

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